收藏本站
HiPerFET TM
Power MOSFET
Q2-Class
N-Channel Enhancement Mode
IXFB38N100Q2
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
1000V
38A
250m Ω
300ns
Avalanche Rated, Low Q g , Low Intrinsic R G
High dV/dt, Low t rr
PLUS264 TM ( IXFB)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
1000
1000
V
V
V GSS
V GSM
I D25
I DM
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 30
± 40
38
152
V
V
A
A
G
D
S
( TAB )
I A
E AS
T C = 25 ° C
T C = 25 ° C
38
5
A
J
G = Gate
S = Source
D = Drain
TAB = Drain
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
F C
Weight
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6 mm (0.063 in.) from case for 10s
Plastic body for 10s
Mounting force
20
890
-55 ... +150
150
-55 ... +150
300
260
30..120/6.7..27
10
V/ns
W
° C
° C
° C
° C
° C
N / lbs
g
Features
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
Advantages
PLUS 264 TM package for clip or spring
BV DSS
V GS(th)
I GSS
V GS = 0 V, I D = 1mA
V DS = V GS , I D = 8mA
V GS = ± 30 V, V DS = 0V
1000
3.0
5.5
± 200
V
V
nA
mounting
Space savings
High power density
I DSS
V DS = V DSS
V GS = 0V
T J = 125 ° C
50 μ A
3 mA
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
250 m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS98949F(05/08)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXFB40N110P MOSFET N-CH 1100V 40A PLUS264
IXFB44N100P MOSFET N-CH 1000V 44A PLUS264
IXFB44N100Q3 MOSFET N-CH 1000V 44A PLUS264
IXFB50N80Q2 MOSFET N-CH 800V 50A PLUS264
IXFB52N90P MOSFET N-CH TO-264
IXFB60N80P MOSFET N-CH 800V 60A PLUS264
IXFB62N80Q3 MOSFET N-CH 800V 62A PLUS264
IXFB70N60Q2 MOSFET N-CH 600V 70A PLUS264
相关代理商/技术参数
IXFB38N100Q2_08 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class
IXFB40N110P 功能描述:MOSFET 40 Amps 1100V 0.2600 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB44N100P 功能描述:MOSFET 44 Amps 1000V 0.22 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB44N100Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB50N80Q2 功能描述:MOSFET 50 Amps 800V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB52N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB60N80P 功能描述:MOSFET 60 Amps 800V 0.14 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB62N80Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 800V/62A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube